| PART |
Description |
Maker |
| ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI20 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFAST?/a> High Density PLD
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP128
In-System Programmable SuperFAST??High Density PLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40
High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44
High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44
High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40
High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| MACH211SP-12 MACH211SP-7JC MACH211SP-7VC MACH211SP |
RES 35.7K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
SCREW MACHINE SLOTTED 6-32X3/4
High-Density EE CMOS Programmable Logic EE PLD, 16 ns, PQCC44
High-Density EE CMOS Programmable Logic 高密度电子工程CMOS可编程逻辑
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| ISPLSI5512VA-70LB388 ISPLSI5512VA-70LB272 ISPLSI55 |
Electrically-Erasable Complex PLD
In-System Programmable 3.3V SuperWIDEHigh Density PLD
In-System Programmable 3.3V SuperWIDE High Density PLD
In-System Programmable 3.3V SuperWIDE?High Density PLD
|
Lattice Semiconductor Corporation
|
| ATV2500B-15KM/883 ATV2500BL-20KM/883 ATV2500BQL-30 |
High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDIP40
High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 15 ns, CQCC44
High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 25 ns, CQCC44
High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PQCC44
High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 25 ns, CDIP40
High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PDIP40
ER 4C 4#8 SKT RECP BOX
Seals
Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Aluminum Alloy; Series:MS3102; No. of Contacts:14; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Gender:Female RoHS Compliant: No
Circular Connector; No. of Contacts:14; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:22-19 RoHS Compliant: No
ER 14C 14#16 SKT RECP
CONTROL KNOB RoHS Compliant: Yes
ER 3C 3#8 SKT RECP BOX
ER 7C 7#16 PIN RECP
ER 3C 1#16 2#8 PIN RECP BOX
ER 9C 9#16 PIN RECP
|
Atmel, Corp.
Atmel Corp.
http://
ATMEL Corporation
|
| LTV8192M LTV-819-1S-TA LTV829S-V LTV-829S-TA LTV82 |
High Density Mounting Type Photocoupler 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
High Density Mounting Type Photocoupler 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
High Density Mounting Type Photocoupler(762.22 k) 高密度安装类型光电耦合62.22十一
|
Lite-On Technology, Corp.
|
| ISPLSI5256VE-125LT100I ISPLSI5256VE-100LF256I ISPL |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
EE PLD, 10 ns, PBGA256
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns.
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| ISPLSI8840-90LB432 8840 ISPLSI8840-110LB432 ISPLSI |
In-System Programmable SuperBIG High Density PLD
In-System Programmable SuperBIG⑩ High Density PLD
|
LATTICE[Lattice Semiconductor]
|
| ISPLSI8600V-125LB272 ISPLSI8600V-125LB492 ISPLSI86 |
3.3V In-System Programmable SuperBIG High Density PLD
3.3V In-System Programmable SuperBIG⑩ High Density PLD
|
LATTICE[Lattice Semiconductor]
|
| IDT72V36100 IDT72V36100L10PF IDT72V36100L15PF IDT7 |
3.3 VOLT HIGH-DENSITY SUPERSYNC⑩ II 36-BIT FIFO
3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO
|
IDT[Integrated Device Technology]
|
